t4 - lds -0 306 , rev . 1 ( 9/ 6 /13 ) ?201 3 microsemi corporation page 1 of 8 2n6051 and 2n6052 available pnp darlington power silicon transistor qualified per mil - prf - 19500/501 qualified levels : jan, jantx, and jantxv description this high speed pnp transistor is rated at 12 amps and is military qualified up to a jantxv level. this to - 204aa isolated package features a 180 degree lead orientation. to - 204a a (to- 3) package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n6051 and 2n6052 ? jan, jantx, and jantxv qualification s are available per mil - prf - 19500/ 5 01 ? rohs compliant versions available (commercial grade only) applications / benefits ? m ilitary, space and othe r high reliability applications ? high frequency response ? to - 204aa case with i solated terminals m axim um ratings @ t c = +25 o c unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg -5 5 to + 175 o c thermal resistance junction - to - case r ? jc 1 .0 o c /w collector current i c - 12 a collector - emitter voltage 2n6051 2n6052 v ceo - 80 - 100 v collector - base voltage 2n6051 2n6052 v cbo - 80 - 100 v emitter - base voltage v ebo -5 v total power dissipation @ t c = +25 o c (1) @ t c = +100 o c p t 150 75 w notes : 1. derate linearly 1 .0 w/ o c above t c > +25 o c. downloaded from: http:///
t4 - lds -0 306 , rev . 1 ( 9/ 6 /13 ) ?201 3 microsemi corporation page 2 of 8 2n6051 and 2n6052 mechanical and packaging ? case: industry standard to - 204a a (to -3 ), hermetically sealed, 0.0 40 inch diameter pins ? finish: solder dipped tin - lead over nickel plated alloy 52 or rohs complian t matte - tin plating. solderable per mil - std - 750 method 2026. ? polarity: pnp (see schematic ) ? mounting hardware: consult factory for optional insulator and sheet metal screws ? w eight: approximately 15 grams ? see p ackage d imensions on last page. part nomenclature jan 2n6051 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee electrical characteristics t able ) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition i b base current: the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the collector terminal. i e emitter current: the value of the dc current into the emitter terminal. t c case temperature: the temperature measured at a specified location on the case of a device. v cb collector - base voltage: the dc voltage between the collector and the base. v cbo collector - base voltage, base open : the voltage between the collector and base terminals when the emitter terminal is open - circuited . v cc collector - supply vol tage: the supply voltage applied to a circuit connected to the collector. v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v ceo collector - emitter voltage, base open : the voltage between the collector and the emitte r terminals when the base terminal is open - circuited. v eb emitter - base voltage: the dc voltage between the emitter and the base v ebo emitter - base voltage, collector open : the voltage between the emitter and base terminals with the collector terminal ope n- circuited. downloaded from: http:///
t4 - lds -0 306 , rev . 1 ( 9/ 6 /13 ) ?201 3 microsemi corporation page 3 of 8 2n6051 and 2n6052 electrical characteristics @ t a = + 25 o c unless otherwise noted characteristics symbol min. max. unit of f characteristics collector - emitter breakdown voltage i c = - 100 ma 2n6051 2n6052 v (br)ceo - 80 - 100 v collector - emitter cut off current v ce = - 40 v v ce = - 50 v 2n6051 2n6052 i ceo - 1.0 - 1.0 ma collector - emitter cutoff current v ce = - 80 v, v be = 1.5 v v ce = - 100 v, v be = 1.5 v 2n6051 2n6052 i cex - 0.01 - 0.01 ma emitter - base cutoff current v be = - 5.0 v i ebo -2 .0 ma on characteristics forward - current transfer ratio i c = - 1.0 a, v ce = 3 .0 v i c = - 6.0 a, v ce = 3 .0 v i c = - 12 a, v ce = 3 .0 v h fe 1,000 1,000 150 18,000 collector - emitter saturation voltage i c = - 12 a, i b = - 12 0 ma i c = -6 .0 a, i b = - 24 ma v ce(sat) - 3.0 - 2.0 v base - emitter saturation voltage i c = - 12 a, i b = - 12 0 ma v be(sat) - 4.0 v base - emitter voltage non - saturated v ce = - 3.0 v, i c = - 6 a v be - 2.8 v dynami c characteristics common emitter small - signal short - circuit f orward current transfer ratio i c = -5 a, v ce = -3 .0 v, f = 1 khz h fe 1,000 magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = - 5 a, v ce = -3 .0 v, f = 1 mhz |h fe | 10 250 output capacitance v cb = 10 v, i e = 0, f = 1 00 k hz f 1 mhz c obo 30 0 pf downloaded from: http:///
t4 - lds -0 306 , rev . 1 ( 9/ 6 /13 ) ?201 3 microsemi corporation page 4 of 8 2n6051 and 2n6052 electrical characteristics @ t c = 25 o c unless otherwise noted. (continued) switchin g characteristics turn - on time v cc = - 30 v, i c = - 5 a; i b1 = -2 0 ma t on 2.0 s turn - off time v cc = - 30 v, i c = - 5 a; i b1 = i b2 = - 20 ma t off 10 s saf e operatin g area (see f igure s 1 and 2 and mil - std - 750,test method 3053 ) dc tests t c = +25 c , +10 oc, - 0 oc , t 1 second , 1 cycle test 1 v ce = - 12 .5 v, i c = - 12 a test 2 v ce = -30 v, i c = -5 a test 3 v ce = -7 0 v, i c = -2 00 ma (2n6051) v ce = -9 0 v, i c = - 155 ma (2n6052 ) downloaded from: http:///
t4 - lds -0 306 , rev . 1 ( 9/ 6 /13 ) ?201 3 microsemi corporation page 5 of 8 2n6051 and 2n6052 safe operating area v ce C collector to emitter volatge (volts) figure 1 maximum s afe o perating a rea (continuous dc) i c = collector current (amperes) downloaded from: http:///
t4 - lds -0 306 , rev . 1 ( 9/ 6 /13 ) ?201 3 microsemi corporation page 6 of 8 2n6051 and 2n6052 safe operating area (continued) l C inductance (millihenries) figure 2 safe operating area f or switching between saturation a nd cutoff (unclamped inductive load). i c = collector current (amperes) downloaded from: http:///
t4 - lds -0 306 , rev . 1 ( 9/ 6 /13 ) ?201 3 microsemi corporation page 7 of 8 2n6051 and 2n6052 package d imensions notes: 1. dimensions are in inches. millimeters are given for information only. 2. millimeters are given for information only. 3. body contour is optional within zone defined by cd. 4. these dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. when gauge is not used, measurement shall be made at seating plane. 5. both terminals. 6. at both ends. 7. two holes. 8. the collector shall be electrically connected to the case. 9. ld applies between l1 and ll. lead diameter shall not exceed twice ld within l1. 10. the seating plane of the header shall be flat within .001 inch (0.03 mm), concave to .004 inch (0.10 mm), convex inside a .930 inch (23.62 mm) diameter circle on the center of the header, and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm), convex overall. 11 . in accordance with asme y14.5m, diameters are equivalent to x s ymbology. dimensions ltr inches millimeters notes min max min max cd - 0 .875 - 22.23 3 ch 0 .2 50 0 .3 28 6.35 8.33 hr 0 .495 0 .525 12.57 13.34 hr1 0 .131 0 .188 3.33 4.78 6 ht 0 .060 0 .135 1.52 3.43 ld 0 .0 38 0 .0 43 0.97 1.09 4, 5, 9 ll 0 .312 0. 500 7.92 12.70 4, 5, 9 l l1 - 0 .050 - 1.27 5, 9 mhd 0 .151 0 .16 1 3.84 4.09 7 mhs 1.177 1.197 29.90 30.40 ps 0 .420 0 .440 10.67 11.18 ps1 0 .205 0 .225 5.21 5.72 5 s1 0 .655 0 .675 16.64 17.15 downloaded from: http:///
t4 - lds -0 306 , rev . 1 ( 9/ 6 /13 ) ?201 3 microsemi corporation page 8 of 8 2n6051 and 2n6052 schematic downloaded from: http:///
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